sensitron semiconductor ?2013 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 - 4681 phone (631 ) 586 - 7600 ? fax (631) 242 - 9798 ? www.sensitron.com ? sales@sensitron.com s radm1004 technical data data sheet 5399 , rev. - hermetic rad hard power mosfet features: ? low rds(on) ? single event effect (see) hardened, let 55, range: 90m o vgs = - 15v, vds = 250v o vgs = - 20v, vds = 160v ? total ioni zation dose (tid) hardened, 100kr ad ? surface mo unt smd - 2 package ? near equivalent to irhna67260 maximum ratings all ratings are at t c = 25 ? c unless otherwise specified. rating symbol min. typ. max. units drain to source voltage v ds - - 250 volts gate to source voltage v gs - - ? 20 volts on - state d rain current i d - - 54 amps pulsed drain current (limited by t jmax ) i dm - - 214 amps operating and storage temperature t op /t stg - 55 - +150 ? c total device dissipation p d - - 250 watts thermal resistance, junction to case r thjc - - 0. 5 ? c/w single pu lse avalanc h e (limited by t jmax ) e as - 380 - mj electrical characteristics characteristic symbol min. typ. max. units drain to source breakdown voltage v gs = 0v, i d = 250 ? a b vdss 250 - - volts st atic drain to source on state resistance v gs = 10v, i d = 3 4 a r ds(on) - - 0.03 ? gate threshold voltage v ds = v gs , i d = 1m a v gs(th) 2.0 - 4.0 volts zero gate voltage drain current v ds = 200v , v gs = 0v i dss - - 2 5 ? a gate to source leakage forward v gs = 20v gate to source leakage reverse v gs = - 20v i gss - - - - 100 - 100 na transconductance v ds = 20v, i ds = 34a - 22 - s turn on delay time v dd = 0 .5 v ds , rise time i d = 3 4 a , turn off delay time r g = 4.7 ? fall time t d(on) t r t d(off) t f - - - - - - - - 80 80 130 80 nsec diod e forward voltage i s = 5 4a v sd - - 1. 2 volts reverse recovery time if = 5 0 a , di/dt = 100a/s t rr - - 700 nsec input capacitan ce v gs = 0 v output capacitance v ds = 100 v reverse transfer capacitance f = 1.0mhz c iss c oss c rss - 11100 696 11 - pf gate resistance r g - 0.9 - ? dd = 0 .5v ds , i d = 54a, v gs = 10v q g - - 180 nc **note: this product is su bject to the international traffic in arms regulations (itar), 22 c.f.r. parts 120 - 130, and may not be exported without the appropriate u.s. department of state authorization.
sensitron semiconductor ?2013 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 - 4681 phone (631 ) 586 - 7600 ? fax (631) 242 - 9798 ? www.sensitron.com ? sales@sensitron.com s radm1004 technical data data sheet 5399, rev. - mechanical dimensions: in inches / mm s smd - 2 device type pin - 1 pin - 2 pin - 3 n - channel mosfet smd - 2 package drain gate source disclaimer: 1 - the information given h erein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. before ordering, purchasers are advised to contact the sensitron semiconductor sales department for the late st version of the datasheet(s). 2 - in cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices tha t feature assured safety or by means of users fail - safe precautions or other arrangement . 3 - in no event shall sensitron semiconductor be liable for any damages that may result from an accident or any other cause durin g operation of the users units acco rding to the datasheet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4 - in no event shal l sensitron semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5 - no license is granted by the datasheet(s) under any patents or other rights of an y third party or sensitron semiconductor. 6 - the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of sensitron semiconductor. 7 - the products (technologies) described in the datashe et(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. when exporting these products ( technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
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